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| SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 4 - MARCH 2001 FEATURES * * Guaranteed hFE Specified up to 2A Fast Switching FZT605 FZT705 C FZT605 E PARTMARKING DETAIL COMPLEMENTARY TYPES C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE 140 120 10 4 1.5 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL MIN. MAX. UNIT CONDITIONS. V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) V BE(sat) V BE(on) h FE 140 120 10 0.01 10 0.1 10 1.0, 1.5 1.8 1.7 2K 5K 2K 100K 0.5K 150 90 Typical 15 Typical 0.5 Typical 1.6 Typical MHz pF pF nsec nsec V V V I C=100A I C=10mA* I E=100A V CB=120V V CB=120V,T amb =100C V EB=8V V CES=120V I C=250mA, I B=0.25mA* I C=1A, I B=1mA* I C=1A, I B=1mA* I C =1A, V CE=5V* I C=50mA, V CE=5V I C=500mA, V CE=5V* I C=1A, V CE=5V* I C=2A, V CE=5V* I C=100mA, V CE=10V f=20MHz V EB=500mV, f=1MHz VCB=10V, F=1MHz I C=500mA, V CE=10V I B1=I B2=0.5mA A A A A V V V V Transition Frequency Input Capacitance Output Capacitance Switching Times ft C ibo C obo t on t off * Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% Spice parameter data is available upon request for these devices. TBA FZT605 TYPICAL CHARACTERISTICS 1.8 1.6 VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IC/IB=100 hFE - Gain normalised to 1 Amp -55C +25C +100C +175C 2.5 2.0 1.5 1.0 0.5 -55C +25C +100C VCE=5V 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 1.8 1.6 -55C +25C +100C +175C 2.2 2.0 1.8 -55C +25C +100C VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 IC/IB=100 VBE - (Volts) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 VCE=5V IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 10 IC-Collector Current (A) IC-Collector Current (A) 1 DC 1s 100ms 10ms 1ms 100s 1 DC 1s 100ms 10ms 1ms 100s 0.1 0.1 0.01 1 10 100 1000 0.01 1 10 100 1000 VCE - Collector Emitter Voltage (V) VCE - Collector Emitter Voltage (V) FZT604 Safe Operating Area FZT605 Safe Operating Area 78 |
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